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Understanding Automotive-Grade Chips in One Article
Release time:
2022-06-15
Power semiconductors are the core components for electrical energy conversion and circuit control in electronic devices, primarily used to modify voltage and frequency, as well as to perform DC–AC conversion. Whenever a circuit system involves current, voltage, or phase conversion, power semiconductor devices are employed.
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Power semiconductors are the core components for electrical energy conversion and circuit control in electronic devices, primarily used to modify voltage and frequency levels and to perform DC‑AC conversions. Any circuit system involving current, voltage, or phase transformations relies on power semiconductor devices. Broadly speaking, power semiconductors fall into two main categories: power discrete devices and power integrated circuits (ICs). Among these, power discrete devices include MOSFETs, diodes, and IGBTs, with MOSFETs and IGBTs being the most critical. MOSFETs and IGBTs are chiefly employed to convert the irregular voltage and frequency of electricity generated by power‑generation equipment into currents with specified electrical parameters through a series of conversion and modulation processes, thereby supplying various end‑use electronic devices and serving as key components in power‑electronics systems. In the global power‑semiconductor market, industrial control accounts for the largest share at 34%, followed by automotive and communications, each representing 23%, while consumer electronics comprise 20%. Both MOSFETs and IGBTs have their own distinct advantages and disadvantages.
Depending on its internal structure, a MOSFET can handle different current levels; in some cases, it can even support currents exceeding several kiloamperes. However, MOSFETs generally have lower voltage‑withstand capability than IGBTs. A key advantage of MOSFETs is their suitability for high‑frequency applications, with operating frequencies ranging from a few hundred kilohertz to tens of megahertz in RF devices. By contrast, IGBTs typically reach their practical limit around 100 kHz. Finally, when fast switching is required, MOSFETs offer a distinct advantage: IGBTs incorporate a bipolar junction transistor (BJT), which suffers from charge‑storage effects—particularly during turn‑off—resulting in longer switching times and limiting high‑speed operation. In summary, MOSFETs are well suited for portable rechargeable batteries and mobile devices, while IGBTs are preferred for high‑voltage, high‑power applications such as electric motors and automotive traction batteries.
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